Product overview
- Product number
- FGY75N60SMD
- Manufacturer
- Rochester Electronics
- Catalog
- Transistors - IGBTs - Single
- product description
- INSULATED GATE BIPOLAR TRANSISTO
Documents and media
- Datasheets
- FGY75N60SMD
Product Details
- Current - Collector (Ic) (Max) :
- 150 A
- Current - Collector Pulsed (Icm) :
- 225 A
- Gate Charge :
- 248 nC
- IGBT Type :
- Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3 Variant
- Part Status :
- Active
- Power - Max :
- 750 W
- Reverse Recovery Time (trr) :
- 55 ns
- Supplier Device Package :
- PowerTO-247-3
- Switching Energy :
- 2.3mJ (on), 770µJ (off)
- Td (on/off) @ 25°C :
- 24ns/136ns
- Test Condition :
- 400V, 75A, 3Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 75A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
product description
INSULATED GATE BIPOLAR TRANSISTO
