Product overview
- Product number
- SGS10N60RUFDTU
- Manufacturer
- Rochester Electronics
- Catalog
- Transistors - IGBTs - Single
- product description
- INSULATED GATE BIPOLAR TRANSISTO
Documents and media
- Datasheets
- SGS10N60RUFDTU
Product Details
- Current - Collector (Ic) (Max) :
- 16 A
- Current - Collector Pulsed (Icm) :
- 30 A
- Gate Charge :
- 30 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Part Status :
- Active
- Power - Max :
- 55 W
- Reverse Recovery Time (trr) :
- 60 ns
- Supplier Device Package :
- TO-220F-3
- Switching Energy :
- 141µJ (on), 215µJ (off)
- Td (on/off) @ 25°C :
- 15ns/36ns
- Test Condition :
- 300V, 10A, 20Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
product description
INSULATED GATE BIPOLAR TRANSISTO
Purchases and prices
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