Product overview
- Product number
- HGTP5N120BND
- Manufacturer
- onsemi
- Catalog
- Transistors - IGBTs - Single
- product description
- IGBT 1200V 21A 167W TO220AB
Documents and media
- Datasheets
- HGTP5N120BND
Product Details
- Current - Collector (Ic) (Max) :
- 21 A
- Current - Collector Pulsed (Icm) :
- 40 A
- Gate Charge :
- 53 nC
- IGBT Type :
- NPT
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Not For New Designs
- Power - Max :
- 167 W
- Reverse Recovery Time (trr) :
- 65 ns
- Supplier Device Package :
- TO-220-3
- Switching Energy :
- 450µJ (on), 390µJ (off)
- Td (on/off) @ 25°C :
- 22ns/160ns
- Test Condition :
- 960V, 5A, 25Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
product description
IGBT 1200V 21A 167W TO220AB
