Product overview
- Product number
- STGB30H65DFB2
- Manufacturer
- STMicroelectronics
- Catalog
- Transistors - IGBTs - Single
- product description
- TRENCH GATE FIELD-STOP 650 V, 30
Documents and media
- Datasheets
- STGB30H65DFB2
Product Details
- Current - Collector (Ic) (Max) :
- 50 A
- Current - Collector Pulsed (Icm) :
- 90 A
- Gate Charge :
- 90 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Part Status :
- Active
- Power - Max :
- 167 W
- Reverse Recovery Time (trr) :
- 115 ns
- Supplier Device Package :
- D2PAK-3
- Switching Energy :
- 270µJ (on), 310µJ (off)
- Td (on/off) @ 25°C :
- 18.4ns/71ns
- Test Condition :
- 400V, 30A, 6.8Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
product description
TRENCH GATE FIELD-STOP 650 V, 30
