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Product overview

Product number
IRGR2B60KDPBF
Manufacturer
Rochester Electronics
Catalog
Transistors - IGBTs - Single
product description
IGBT WITH RECOVERY DIODE

Documents and media

Datasheets
IRGR2B60KDPBF

Product Details

Current - Collector (Ic) (Max) :
6.3 A
Current - Collector Pulsed (Icm) :
8 A
Gate Charge :
12 nC
IGBT Type :
NPT
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Obsolete
Power - Max :
35 W
Reverse Recovery Time (trr) :
68 ns
Supplier Device Package :
D-Pak
Switching Energy :
74µJ (on), 39µJ (off)
Td (on/off) @ 25°C :
11ns/150ns
Test Condition :
400V, 2A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.25V @ 15V, 2A
Voltage - Collector Emitter Breakdown (Max) :
600 V

product description

IGBT WITH RECOVERY DIODE

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