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Product overview

Product number
AIKB30N65DF5ATMA1
Manufacturer
Infineon Technologies
Catalog
Transistors - IGBTs - Single
product description
IC DISCRETE 650V TO263-3

Documents and media

Datasheets
AIKB30N65DF5ATMA1

Product Details

Current - Collector (Ic) (Max) :
55 A
Current - Collector Pulsed (Icm) :
90 A
Gate Charge :
70 nC
IGBT Type :
Trench Field Stop
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status :
Active
Power - Max :
188 W
Reverse Recovery Time (trr) :
67 ns
Supplier Device Package :
PG-TO263-3
Switching Energy :
330µJ (on), 100µJ (off)
Td (on/off) @ 25°C :
25ns/188ns
Test Condition :
400V, 15A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max) :
650 V

product description

IC DISCRETE 650V TO263-3

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