Product overview
- Product number
- AIKB30N65DF5ATMA1
- Manufacturer
- Infineon Technologies
- Catalog
- Transistors - IGBTs - Single
- product description
- IC DISCRETE 650V TO263-3
Documents and media
- Datasheets
- AIKB30N65DF5ATMA1
Product Details
- Current - Collector (Ic) (Max) :
- 55 A
- Current - Collector Pulsed (Icm) :
- 90 A
- Gate Charge :
- 70 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Power - Max :
- 188 W
- Reverse Recovery Time (trr) :
- 67 ns
- Supplier Device Package :
- PG-TO263-3
- Switching Energy :
- 330µJ (on), 100µJ (off)
- Td (on/off) @ 25°C :
- 25ns/188ns
- Test Condition :
- 400V, 15A, 23Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 30A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
product description
IC DISCRETE 650V TO263-3
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