Product overview
- Product number
- RGTV80TS65DGC11
- Manufacturer
- ROHM Semiconductor
- Catalog
- Transistors - IGBTs - Single
- product description
- 650V 40A FIELD STOP TRENCH IGBT
Documents and media
- Datasheets
- RGTV80TS65DGC11
Product Details
- Current - Collector (Ic) (Max) :
- 78 A
- Current - Collector Pulsed (Icm) :
- 160 A
- Gate Charge :
- 81 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Part Status :
- Active
- Power - Max :
- 234 W
- Reverse Recovery Time (trr) :
- 101 ns
- Supplier Device Package :
- TO-247N
- Switching Energy :
- 1.02mJ (on), 710µJ (off)
- Td (on/off) @ 25°C :
- 39ns/113ns
- Test Condition :
- 400V, 40A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
product description
650V 40A FIELD STOP TRENCH IGBT
Purchases and prices
Recommended Products
You may be looking for
F3SG-4SRB1520-25
VE-21H-CV-B1
MSF4800S-20-0760-10X-10R-RM2AP
LM3075MTC/NOPB
MPS2907A-H-BP
MS4800A-14-1760
VI-21J-EW-B1
MSF4800S-14-0520-14-0640-14-0520-10X-10R
ISL6845IB-T
ISL6326IRZ
LTC3851AIUD#PBF
PDTC114EMB,315
CP307-MPSA13-CT
VI-J13-EY-F2
VE-21J-CU-F3
2SB857-B-BP
SF4B-H64G-01(V2)
VE-21H-CV-F2
MS4800S-30-2000-10X-10R-RMX
MC33129EFR2