Product overview
- Product number
- HGTD1N120BNS9A
- Manufacturer
- onsemi
- Catalog
- Transistors - IGBTs - Single
- product description
- IGBT 1200V 5.3A 60W TO252AA
Documents and media
- Datasheets
- HGTD1N120BNS9A
Product Details
- Current - Collector (Ic) (Max) :
- 5.3 A
- Current - Collector Pulsed (Icm) :
- 6 A
- Gate Charge :
- 14 nC
- IGBT Type :
- NPT
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Active
- Power - Max :
- 60 W
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-252AA
- Switching Energy :
- 70µJ (on), 90µJ (off)
- Td (on/off) @ 25°C :
- 15ns/67ns
- Test Condition :
- 960V, 1A, 82Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.9V @ 15V, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
product description
IGBT 1200V 5.3A 60W TO252AA
