Datasheets

STD110N02RT4G-VF01

Current - Continuous Drain (Id) @ 25°C :

32A (Ta), 110A (Tc)

Drain to Source Voltage (Vdss) :

24 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

3440 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Obsolete

Power Dissipation (Max) :

2.88W (Ta), 110W (Tc)

Rds On (Max) @ Id, Vgs :

4.6mOhm @ 20A, 10V

Supplier Device Package :

DPAK-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA