Product overview
- Product number
- SIR876DP-T1-GE3
- Manufacturer
- Vishay
- product description
- MOSFET N-CH 100V 40A PPAK SO-8
Documents and media
- Datasheets
- SIR876DP-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 40A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 5W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs :
- 10.8mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.8V @ 250µA
product description
MOSFET N-CH 100V 40A PPAK SO-8