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Product overview

Product number
NTD3817N-35G
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 16V 7.6A/34.5A IPAK

Documents and media

Datasheets
NTD3817N-35G

Product Details

Current - Continuous Drain (Id) @ 25°C :
7.6A (Ta), 34.5A (Tc)
Drain to Source Voltage (Vdss) :
16 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
702 pF @ 12 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-251-3 Stub Leads, IPak
Part Status :
Obsolete
Power Dissipation (Max) :
1.2W (Ta), 25.9W (Tc)
Rds On (Max) @ Id, Vgs :
13.9mOhm @ 15A, 10V
Supplier Device Package :
I-PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±16V
Vgs(th) (Max) @ Id :
2.5V @ 250µA

product description

MOSFET N-CH 16V 7.6A/34.5A IPAK

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