Product overview
Documents and media
- Datasheets
- IXFT6N100Q
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Tc)
- Drain to Source Voltage (Vdss) :
- 1000 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 180W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.9Ohm @ 3A, 10V
- Supplier Device Package :
- TO-268AA
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 2.5mA
product description
MOSFET N-CH 1000V 6A TO268
Purchases and prices
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