Datasheets

IXFN100N10S2

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

180 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4500 pF @ 25 V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SOT-227-4, miniBLOC

Part Status :

Obsolete

Power Dissipation (Max) :

360W (Tc)

Rds On (Max) @ Id, Vgs :

15mOhm @ 500mA, 10V

Supplier Device Package :

SOT-227B

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 4mA