Product overview
- Product number
- NVMFS6H818NT1G
- Manufacturer
- Rochester Electronics
- product description
- SINGLE N-CHANNEL POWER MOSFET 80
Documents and media
- Datasheets
- NVMFS6H818NT1G
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Ta), 123A (Tc)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100 pF @ 40 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Part Status :
- Active
- Power Dissipation (Max) :
- 3.8W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.7mOhm @ 20A, 10V
- Supplier Device Package :
- 5-DFN (5x6) (8-SOFL)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 190µA
product description
SINGLE N-CHANNEL POWER MOSFET 80