Product overview
- Product number
- NDT451AN
- Manufacturer
- Rochester Electronics
- product description
- POWER FIELD-EFFECT TRANSISTOR, 7
Documents and media
- Datasheets
- NDT451AN
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 720 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Package / Case :
- TO-261-4, TO-261AA
- Part Status :
- Active
- Power Dissipation (Max) :
- 3W (Ta)
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 7.2A, 10V
- Supplier Device Package :
- SOT-223-4
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
product description
POWER FIELD-EFFECT TRANSISTOR, 7
