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Product overview

Product number
FDT3612
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
POWER FIELD-EFFECT TRANSISTOR, 3

Documents and media

Datasheets
FDT3612

Product Details

Current - Continuous Drain (Id) @ 25°C :
3.7A (Ta)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
632 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-261-4, TO-261AA
Part Status :
Active
Power Dissipation (Max) :
3W (Ta)
Rds On (Max) @ Id, Vgs :
120mOhm @ 3.7A, 10V
Supplier Device Package :
SOT-223-4
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA

product description

POWER FIELD-EFFECT TRANSISTOR, 3

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