Product overview
- Product number
- 25P06
- Manufacturer
- Goford Semiconductor
- product description
- P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Documents and media
- Datasheets
- 25P06
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 25A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3384 pF @ 30 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Active
- Power Dissipation (Max) :
- 100W (Tc)
- Rds On (Max) @ Id, Vgs :
- 45mOhm @ 12A, 10V
- Supplier Device Package :
- TO-252
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
product description
P60V,RD(MAX)<45M@-10V,VTH2V~3V T