Product overview
- Product number
- FBG10N30BC
- Manufacturer
- EPC Space
- product description
- GAN FET HEMT100V30A COTS 4FSMD-B
Documents and media
- Datasheets
- FBG10N30BC
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 4-SMD, No Lead
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 30A, 5V
- Supplier Device Package :
- 4-SMD
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -4V
- Vgs(th) (Max) @ Id :
- 2.5V @ 5mA
product description
GAN FET HEMT100V30A COTS 4FSMD-B
