Welcome to visit our website, our working hours are: Monday to Friday 9:00-18:00.

Product overview

Product number
EPC7014UBC
Manufacturer
EPC Space
Catalog
Transistors - FETs, MOSFETs - Single
product description
GAN FET HEMT 60V 1A COTS 4UB

Documents and media

Datasheets
EPC7014UBC

Product Details

Current - Continuous Drain (Id) @ 25°C :
1A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
22 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
4-SMD, No Lead
Part Status :
Active
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
580mOhm @ 1A, 5V
Supplier Device Package :
4-SMD
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
+7V, -4V
Vgs(th) (Max) @ Id :
2.5V @ 140µA

product description

GAN FET HEMT 60V 1A COTS 4UB

Purchases and prices

Recommended Products