Datasheets

UF3SC065030D8S

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

43 nC @ 12 V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-PowerTSFN

Part Status :

Obsolete

Power Dissipation (Max) :

179W (Tc)

Rds On (Max) @ Id, Vgs :

42mOhm @ 20A, 12V

Supplier Device Package :

4-DFN (8x8)

Technology :

SiCFET (Cascode SiCJFET)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

6V @ 10mA