Datasheets

IPI60R099CPAAKSA1

Current - Continuous Drain (Id) @ 25°C :

31A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2800 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Part Status :

Last Time Buy

Power Dissipation (Max) :

255W (Tc)

Rds On (Max) @ Id, Vgs :

105mOhm @ 18A, 10V

Supplier Device Package :

PG-TO262-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA