Product overview
Documents and media
- Datasheets
- GPIHV30SB5L
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 30A
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8.25 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 236 pF @ 400 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- Die
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Die
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +7.5V, -12V
- Vgs(th) (Max) @ Id :
- 1.4V @ 3.5mA
product description
GANFET N-CH 1200V 30A TO263-5L
