Product overview
- Product number
- IV1Q12160T4
- Manufacturer
- -
- product description
- SIC MOSFET, 1200V 160MOHM, TO-24
Documents and media
- Datasheets
- IV1Q12160T4
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 20V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 43 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 885 pF @ 800 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-4
- Part Status :
- Active
- Power Dissipation (Max) :
- 138W (Tc)
- Rds On (Max) @ Id, Vgs :
- 195mOhm @ 10A, 20V
- Supplier Device Package :
- TO-247-4
- Technology :
- SiC (Silicon Carbide Junction Transistor)
- Vgs (Max) :
- +20V, -5V
- Vgs(th) (Max) @ Id :
- 2.9V @ 1.9mA
product description
SIC MOSFET, 1200V 160MOHM, TO-24
Purchases and prices
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