Datasheets

IPI200N25N3GAKSA1

Current - Continuous Drain (Id) @ 25°C :

64A (Tc)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

86 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7100 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Part Status :

Not For New Designs

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

20mOhm @ 64A, 10V

Supplier Device Package :

PG-TO262-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 270µA