Product overview
- Product number
- FDMS8670S
- Manufacturer
- Rochester Electronics
- product description
- POWER FIELD-EFFECT TRANSISTOR, 2
Documents and media
- Datasheets
- FDMS8670S
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Ta), 42A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 73 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 2.5W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.5mOhm @ 20A, 10V
- Supplier Device Package :
- 8-PQFN (5x6)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
product description
POWER FIELD-EFFECT TRANSISTOR, 2
Purchases and prices
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