Product overview
Documents and media
- Datasheets
- SIHB24N65E-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 24A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2740 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Power Dissipation (Max) :
- 250W (Tc)
- Rds On (Max) @ Id, Vgs :
- 145mOhm @ 12A, 10V
- Supplier Device Package :
- D²PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET N-CH 650V 24A D2PAK
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