Product overview
- Product number
- IPP100N08S207AKSA1
- Manufacturer
- Rochester Electronics
- product description
- MOSFET N-CH 75V 100A TO220-3
Documents and media
- Datasheets
- IPP100N08S207AKSA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 100A (Tc)
- Drain to Source Voltage (Vdss) :
- 75 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Not For New Designs
- Power Dissipation (Max) :
- 300W (Tc)
- Rds On (Max) @ Id, Vgs :
- 7.1mOhm @ 80A, 10V
- Supplier Device Package :
- PG-TO220-3-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET N-CH 75V 100A TO220-3