Product overview
- Product number
- G12P03D3
- Manufacturer
- Goford Semiconductor
- product description
- P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Documents and media
- Datasheets
- G12P03D3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 24.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1253 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 3W (Tc)
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 6A, 10V
- Supplier Device Package :
- 8-DFN (3.15x3.05)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
product description
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
