Product overview
- Product number
- FQD5N20LTM
- Manufacturer
- Rochester Electronics
- product description
- POWER FIELD-EFFECT TRANSISTOR, 3
Documents and media
- Datasheets
- FQD5N20LTM
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 325 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Active
- Power Dissipation (Max) :
- 2.5W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 1.9A, 10V
- Supplier Device Package :
- TO-252, (D-Pak)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
product description
POWER FIELD-EFFECT TRANSISTOR, 3
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