Product overview
- Product number
- G01N20LE
- Manufacturer
- Goford Semiconductor
- product description
- N200V,RD(MAX)<850M@10V,RD(MAX)<9
Documents and media
- Datasheets
- G01N20LE
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 580 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.5W (Tc)
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 1.7A, 10V
- Supplier Device Package :
- SOT-23-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
product description
N200V,RD(MAX)<850M@10V,RD(MAX)<9
