Datasheets

TK6Q65W,S1Q

Current - Continuous Drain (Id) @ 25°C :

5.8A (Ta)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

390 pF @ 300 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Part Status :

Active

Power Dissipation (Max) :

60W (Tc)

Rds On (Max) @ Id, Vgs :

1.05Ohm @ 2.9A, 10V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.5V @ 180µA