Product overview
- Product number
- G6N02L
- Manufacturer
- Goford Semiconductor
- product description
- MOSFET N-CH 20V 6A SOT-23-3L
Documents and media
- Datasheets
- G6N02L
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- FET Feature :
- Standard
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1140 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.8W (Tc)
- Rds On (Max) @ Id, Vgs :
- 11.3mOhm @ 3A, 4.5V
- Supplier Device Package :
- SOT-23-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 0.9V @ 250µA
product description
MOSFET N-CH 20V 6A SOT-23-3L
