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Product overview

Product number
G3035L
Manufacturer
Goford Semiconductor
Catalog
Transistors - FETs, MOSFETs - Single
product description
P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Documents and media

Datasheets
G3035L

Product Details

Current - Continuous Drain (Id) @ 25°C :
4.1A (Ta)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
650 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Part Status :
Active
Power Dissipation (Max) :
1.4W (Ta)
Rds On (Max) @ Id, Vgs :
59mOhm @ 2.1A, 10V
Supplier Device Package :
SOT-23-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA

product description

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

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