Datasheets

IPI147N12N3GAKSA1

Current - Continuous Drain (Id) @ 25°C :

56A (Ta)

Drain to Source Voltage (Vdss) :

120 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3220 pF @ 60 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Part Status :

Not For New Designs

Power Dissipation (Max) :

107W (Tc)

Rds On (Max) @ Id, Vgs :

14.7mOhm @ 56A, 10V

Supplier Device Package :

PG-TO262-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 61µA