Datasheets

AOUS66616

Current - Continuous Drain (Id) @ 25°C :

33A (Ta), 92A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2870 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-PowerSMD, Flat Leads

Part Status :

Active

Power Dissipation (Max) :

6.2W (Ta), 92.5W (Tc)

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 20A, 10V

Supplier Device Package :

UltraSO-8™

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.4V @ 250µA