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Product overview

Product number
DMT12H065LFDF-13
Manufacturer
Diodes Incorporated
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 115V 4.3A 6UDFN

Documents and media

Datasheets
DMT12H065LFDF-13

Product Details

Current - Continuous Drain (Id) @ 25°C :
4.3A (Ta)
Drain to Source Voltage (Vdss) :
115 V
Drive Voltage (Max Rds On, Min Rds On) :
3V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
252 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-UDFN Exposed Pad
Part Status :
Active
Power Dissipation (Max) :
1W (Ta)
Rds On (Max) @ Id, Vgs :
65mOhm @ 3A, 10V
Supplier Device Package :
U-DFN2020-6 (Type F)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±12V
Vgs(th) (Max) @ Id :
2.2V @ 250µA

product description

MOSFET N-CH 115V 4.3A 6UDFN

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