Datasheets

TK8A10K3,S5Q

Current - Continuous Drain (Id) @ 25°C :

8A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.9 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

530 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Part Status :

Last Time Buy

Power Dissipation (Max) :

18W (Tc)

Rds On (Max) @ Id, Vgs :

120mOhm @ 4A, 10V

Supplier Device Package :

TO-220SIS

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA