Datasheets

SI7116BDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

18.4A (Ta), 65A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1915 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Part Status :

Active

Power Dissipation (Max) :

5W (Ta), 62.5W (Tc)

Rds On (Max) @ Id, Vgs :

7.4mOhm @ 16A, 10V

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA