Product overview
Documents and media
- Datasheets
- 2N6895
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.16A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 150 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-205AF Metal Can
- Part Status :
- Active
- Power Dissipation (Max) :
- 8.33W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.65Ohm @ 740mA, 10V
- Supplier Device Package :
- TO-205AF (TO-39)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
P-CHANNEL, MOSFET
Purchases and prices
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