Datasheets

PJQ4476AP_R2_00001

Current - Continuous Drain (Id) @ 25°C :

6.3A (Ta), 35A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1519 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Part Status :

Active

Power Dissipation (Max) :

2W (Ta), 62W (Tc)

Rds On (Max) @ Id, Vgs :

25mOhm @ 15A, 10V

Supplier Device Package :

DFN3333-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA