Product overview
- Product number
- IPA037N08N3GXKSA1
- Manufacturer
- Rochester Electronics
- product description
- MOSFET N-CH 80V 75A TO220-FP
Documents and media
- Datasheets
- IPA037N08N3GXKSA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 75A (Tc)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 117 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8110 pF @ 40 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Part Status :
- Active
- Power Dissipation (Max) :
- 41W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.7mOhm @ 75A, 10V
- Supplier Device Package :
- PG-TO220-FP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 155µA
product description
MOSFET N-CH 80V 75A TO220-FP
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