Datasheets

TP65H150G4LSG-TR

Current - Continuous Drain (Id) @ 25°C :

13A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

598 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

2-PowerTSFN

Part Status :

Active

Power Dissipation (Max) :

52W (Tc)

Rds On (Max) @ Id, Vgs :

180mOhm @ 8.5A, 10V

Supplier Device Package :

2-PQFN (8x8)

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.8V @ 500µA