Product overview
Documents and media
- Datasheets
- SIHP14N60E-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 13A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1205 pF @ 100 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 147W (Tc)
- Rds On (Max) @ Id, Vgs :
- 309mOhm @ 7A, 10V
- Supplier Device Package :
- TO-220AB
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET N-CH 600V 13A TO220AB