Product overview
- Product number
- TK3R1A04PL,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET N-CH 40V 82A TO220SIS
Documents and media
- Datasheets
- TK3R1A04PL,S4X
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 82A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 63.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4670 pF @ 20 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Part Status :
- Active
- Power Dissipation (Max) :
- 36W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.8mOhm @ 30A, 4.5V
- Supplier Device Package :
- TO-220SIS
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.4V @ 500µA
product description
MOSFET N-CH 40V 82A TO220SIS