Product overview
- Product number
- TPH8R80ANH,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET N CH 100V 32A 8-SOP
Documents and media
- Datasheets
- TPH8R80ANH,L1Q
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 32A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.6W (Ta), 61W (Tc)
- Rds On (Max) @ Id, Vgs :
- 8.8mOhm @ 16A, 10V
- Supplier Device Package :
- 8-SOP Advance (5x5)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 500µA
product description
MOSFET N CH 100V 32A 8-SOP
