Datasheets

C2M1000170J

Current - Continuous Drain (Id) @ 25°C :

5.3A (Tc)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 1000 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-7 (Straight Leads)

Part Status :

Active

Power Dissipation (Max) :

78W (Tc)

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 20V

Supplier Device Package :

D2PAK (7-Lead)

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

3.1V @ 500µA (Typ)