Datasheets

SPW32N50C3FKSA1

Current - Continuous Drain (Id) @ 25°C :

32A (Tc)

Drain to Source Voltage (Vdss) :

560 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

170 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4200 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Part Status :

Not For New Designs

Power Dissipation (Max) :

284W (Tc)

Rds On (Max) @ Id, Vgs :

110mOhm @ 20A, 10V

Supplier Device Package :

PG-TO247-3-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.9V @ 1.8mA