Product overview
- Product number
- IPA60R360P7XKSA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET N-CHANNEL 650V 9A TO220
Documents and media
- Datasheets
- IPA60R360P7XKSA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 555 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Part Status :
- Active
- Power Dissipation (Max) :
- 22W (Tc)
- Rds On (Max) @ Id, Vgs :
- 360mOhm @ 2.7A, 10V
- Supplier Device Package :
- PG-TO220 Full Pack
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 140µA
product description
MOSFET N-CHANNEL 650V 9A TO220