Datasheets

SI7738DP-T1-E3

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

53 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2100 pF @ 75 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8

Part Status :

Active

Power Dissipation (Max) :

5.4W (Ta), 96W (Tc)

Rds On (Max) @ Id, Vgs :

38mOhm @ 7.7A, 10V

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA