Datasheets

IPD50N04S4L08ATMA1

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2340 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power Dissipation (Max) :

46W (Tc)

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 50A, 10V

Supplier Device Package :

PG-TO252-3-313

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -16V

Vgs(th) (Max) @ Id :

2.2V @ 17µA